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Updated: Feb 16, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Automatic detection of single-electron regime and virtual gate definition in quantum dots using U-Net and clustering
Yui Muto1,2, Michael R Zielewski3,4, Motoya Shinozaki5
1Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan.
None:
To realize practical quantum computers, a large number of quantum bits (qubits) will be required. Semiconductor spin qubits offer advantages such as high scalability and compatibility with existing semiconductor technologies. However, as the number of qubits increases, manual qubit tuning becomes infeasible, motivating automated tuning approaches. In this study, we use U-Net, a neural network method for object detection, to identify charge transition lines in experimental charge stability diagrams. The extracted charge transition lines are analyzed using the Hough transform to determine their positions and angles. Based on this analysis, we obtain the transformation matrix to virtual gates. Furthermore, we identify the single-electron regime by clustering the Hough transform outputs. We also show the single-electron regime within the virtual gate space. These sequential processes are performed automatically. This approach will advance automated control technologies for large-scale quantum devices.
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