Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Preparation of Samples for Electron Microscopy

Preparation of Samples for Electron Microscopy

To be visualized by an electron microscope, either transmission or scanning, biological samples need to be fixed (stabilized) so the electron beam does not destroy them and dried thoroughly (desiccated/dehydrated) so the vacuum does not affect them. Fixation needs to be done as quickly as possible because the sample properties will start changing as soon as it is removed from its natural environment. For example, in a tissue sample, the oxygen levels begin decreasing, causing an altered...

Scanning Electron Microscopy

Scanning Electron Microscopy

A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
Accelerated...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

SpaceXray: Feasibility and Diagnostic Capabilities of On-Orbit Medical Radiography.

Radiology·2026

Same author

Exposed: investigation of oxidation in selenium-tellurium evaporation materials and its effect on optoelectronic devices.

Journal of materials science. Materials in electronics·2026

Same author

Deep-learning-based multiple organ segmentation for CT scout images: applications to automatic CT planning.

Journal of medical imaging (Bellingham, Wash.)·2026

Same author

Monte Carlo validation of signal-to-noise improvements in transmission imaging using correlated annihilation photon pairs.

Scientific reports·2026

Same author

A comparative analysis of two dual-layer flat panel detector designs and mimicking of a triple-layer flat panel detector in spectral CT.

Medical physics·2026

Same author

Implicitly Defined Material Decomposition Estimator and Learned Physics-Informed Neural Proxy for Photon Counting CT.

IEEE transactions on medical imaging·2026

Search research articles

Related Experiment Video

Updated: Feb 17, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Characterization of Thick Selenium Layers for Dual-Layer X-ray Imaging.

Akyl Swaby¹, Kaitlin Hellier¹, Linxi Shi²

¹Department of Electrical and Computer Engineering, University of California Santa Cruz, Santa Cruz, CA 95064, USA.

IEEE Transactions on Nuclear Science

|February 16, 2026

Summary

Thick amorphous selenium (a-Se) layers were fabricated for dual-layer X-ray flat-panel detectors (DL-FPDs). Thicker a-Se layers enhance X-ray absorption and photocurrent but may increase signal persistence.

Keywords:

Amorphous Selenium Cascade Linear System Model Charge transport Dual Energy Temporal characteristics X-ray imaging

More Related Videos

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

Published on: March 6, 2020

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Related Experiment Videos

Last Updated: Feb 17, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

Published on: March 6, 2020

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Area of Science:

Medical Physics
Materials Science
X-ray Imaging Technology

Background:

Amorphous selenium (a-Se) is a direct conversion X-ray photoconductor with excellent properties for X-ray imaging.
Thick a-Se layers are being explored for cost-effective dual-layer X-ray flat-panel detectors (DL-FPDs).

Purpose of the Study:

To fabricate and evaluate thick amorphous selenium layers for DL-FPDs.
To investigate the impact of a-Se layer thickness on detector performance, including dark current, photoresponse, and temporal lag.

Main Methods:

Manufactured 253 μm and 414 μm a-Se samples with polyimide hole-blocking contacts.
Measured dark current suppression below 10 pA/mm² at electric fields up to 10 V/μm.
Evaluated photoresponse under low-energy X-ray irradiation and analyzed temporal lag.

Main Results:

Both fabricated a-Se layers exhibited low dark current.
The 414 μm a-Se layer showed higher photocurrent due to increased photon absorption.
Thicker a-Se samples displayed more signal persistence at lower bias, indicating increased carrier trapping.

Conclusions:

Thick a-Se layers are viable for DL-FPDs, offering improved photon absorption.
Layer thickness influences carrier trapping and signal persistence, requiring careful consideration for readout electronics design.
These findings provide critical metrics for optimizing future direct/indirect DL-FPD designs.