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  3. Quantum-metric-based Optical Selection Rules.
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  3. Quantum-metric-based Optical Selection Rules.

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Quantum-Metric-Based Optical Selection Rules.

Yongpan Li1, Cheng-Cheng Liu1

  • 1Beijing Institute of Technology, Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing 100081, China.

Physical Review Letters
|February 16, 2026

View abstract on PubMed

Summary
This summary is machine-generated.

We introduce quantum-metric optical selection rules, expanding beyond Berry curvature. This new paradigm establishes valley-contrasted rules, linking light polarization to distinct valleys for advanced optoelectronics.

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Area of Science:

  • Solid-state physics
  • Quantum mechanics
  • Materials science

Background:

  • Optical selection rules govern transitions in materials, crucial for optoelectronics.
  • Conventional theories focus on Berry curvature, neglecting the quantum metric's role.
  • Exciton states and quantum geometry are key to understanding light-matter interactions.

Purpose of the Study:

  • Propose novel quantum-metric-based optical selection rules.
  • Establish a correspondence between quantum metric and oscillator strength for linear polarization.
  • Develop valley-contrasted optical selection rules for spintronics and optoelectronics.

Main Methods:

  • Theoretical formulation of quantum-metric optical selection rules.
  • Analysis of quantum geometry contributions (real and imaginary parts).
  • Tight-binding and first-principles calculations for validation.

    • Main Results:

    • Unveiled a universal quantum metric and oscillator strength relationship.
    • Established valley-contrasted selection rules locking orthogonal polarizations to valleys.
    • Confirmed theory in altermagnet, Kane-Mele models, and V2SeSO.

    Conclusions:

    • Quantum metric offers a new paradigm for optical selection rules.
    • Valley-contrasted rules enable precise control of light polarization.
    • Potential for advancements in valley-based spintronic and optoelectronic devices.