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A Thin Film Source in a Solid-State Diffusion Experiment: CoO on SrTiO3.

Qian Ma1, Janina Malin Rybak1, Natalie Jacqueline Ottinger1

  • 1Institut für Materialphysik, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.

Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
|February 17, 2026
PubMed
Summary

We developed a thin film method for creating sharp interfaces for diffusion experiments. This technique enables precise analysis of diffusion profiles in materials like cobalt oxide on strontium titanate.

Keywords:
interface roughnesssolid-state diffusionthin films

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Area of Science:

  • Materials Science
  • Solid-State Chemistry
  • Surface Science

Background:

  • Quantitative analysis of diffusion profiles requires sharp interfaces.
  • Fabricating such interfaces for diffusion studies is challenging.

Purpose of the Study:

  • To demonstrate a thin film deposition method for creating sharp interfaces for diffusion experiments.
  • To investigate cobalt (II) oxide (CoO) film growth on strontium titanate (STO) for use as a diffusion source.

Main Methods:

  • Ion beam sputtering for CoO thin film deposition on STO at room temperature.
  • Diffusion annealing to induce Co diffusion.
  • Characterization using energy dispersive X-ray spectroscopy (EDS) in a transmission electron microscope (TEM), atom probe tomography (APT), and time-of-flight secondary ion mass spectroscopy (ToF-SIMS).

Main Results:

  • Nearly single-crystalline, epitaxial CoO films with flat, sharp interfaces on STO were achieved.
  • Conditions for maintaining stable CoO layers as a constant Co diffusion source were identified.
  • Partial formation of Co3O4 phase observed after diffusion annealing.
  • Co-diffusion profiles were successfully measured using multiple techniques.

Conclusions:

  • The demonstrated thin film method provides a reliable way to create sharp interfaces for diffusion studies.
  • The CoO/STO system serves as a model for studying diffusion in oxides.
  • Discrepancies in diffusion constants across different measurement scales were observed and discussed.