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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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Fast Switching and High Polarization in Ferroelectric Hf_0.5Zr_0.5O₂ Films.

Faizan Ali¹, Tingfeng Song^2,3, Florencio Sánchez¹

¹Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB 08193 Bellaterra Spain.

|February 19, 2026

Summary

Researchers developed hafnium zirconium oxide ferroelectric films with high polarization and fast switching speeds. Precise control over film defects, by optimizing deposition conditions, overcomes the typical trade-off between these properties for advanced memory devices.

Keywords:

defect dipoles domain dynamics domain wall ferroelectric HfO2 polarization switching kinetics

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Area of Science:

Materials Science
Solid State Physics
Nanotechnology

Background:

Hafnium oxide (HfO2)-based ferroelectric thin films are crucial for next-generation nonvolatile memories and neuromorphic computing.
A key challenge is the trade-off between achieving high ferroelectric polarization and fast switching speeds.

Purpose of the Study:

To achieve simultaneous high polarization and fast switching in Hf0.5Zr0.5O2 epitaxial films.
To investigate the impact of redox conditions during film growth on ferroelectric properties and switching kinetics.

Main Methods:

Pulsed laser deposition (PLD) was used to grow Hf0.5Zr0.5O2 epitaxial films.
Redox conditions were systematically tuned by adjusting oxygen and argon pressures during deposition.
Switching spectroscopy and Rayleigh analysis were employed to characterize ferroelectric switching kinetics and domain wall motion.

Main Results:

Optimized redox conditions during Hf0.5Zr0.5O2 deposition significantly enhanced both polarization and switching speeds.
Switching times were further reduced by aligning the final polarization state with internal electric fields.
The study demonstrated that precise control over film defects can overcome the polarization-switching speed trade-off.

Conclusions:

Simultaneous high polarization and fast switching in Hf0.5Zr0.5O2 ferroelectric films are achievable.
Defect engineering through control of redox conditions during PLD is a viable strategy to optimize ferroelectric performance.
This work offers a pathway to improved materials for advanced electronic devices.