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Updated: Jul 11, 2026

Gradient Echo Quantum Memory in Warm Atomic Vapor

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Published on: November 11, 2013

Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies.

Andrey N Anisimov, Ashin V Mathews, Kalliopi Mavridou

|February 20, 2026

Summary

Researchers created new chlorine-vacancy (ClV) color centers in 4H-SiC for fiber-optic telecom bands. These defects show potential for scalable quantum networks.

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Area of Science:

Materials Science
Quantum Optics
Solid-State Physics

Background:

Color centers in silicon carbide (SiC) are promising for quantum technologies.
Existing color centers often lack emission in crucial telecom bands.

Purpose of the Study:

To experimentally realize and optically characterize novel chlorine-vacancy (ClV) color centers in 4H-SiC.
To investigate their emission properties within the fiber-optic telecom bands.

Main Methods:

Chlorine ion implantation into 4H-SiC followed by high-temperature annealing.
Photoluminescence spectroscopy to identify and characterize defect emission.
Controlled experiments to confirm defect origin and optimize creation conditions.

Main Results:

Successfully created ClV color centers in 4H-SiC.
Observed four distinct ClV configurations with zero-phonon lines (ZPLs) in the O-, S-, and C-telecom bands.
Confirmed ClV centers originate from chlorine incorporation, not intrinsic SiC defects.
Demonstrated stable ZPL intensity up to 30 K.

Conclusions:

ClV defects represent a new class of telecom-band color centers in 4H-SiC.
These centers are compatible with CMOS platforms, enabling scalable quantum networks.
The findings open new avenues for integrated photonic quantum devices.