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Area of Science:

Photonics and Optical Engineering
Materials Science and Engineering
Semiconductor Device Physics

Background:

Integrated mode-locked lasers are crucial for applications like telecommunications and spectroscopy.
Current integrated laser designs suffer from low output power, limiting their practical use.
Heterogeneous integration offers a path to overcome these limitations.

Purpose of the Study:

To demonstrate a heterogeneously integrated III/V-on-silicon nitride mode-locked laser with improved output power.
To address the power limitations of current integrated comb sources.
To showcase the potential of micro-transfer printing for advanced photonic integration.

Main Methods:

Utilized a two-step micro-transfer printing approach for heterogeneous integration.
Integrated a III/V semiconductor optical amplifier and a silicon interposer coupon.
Incorporated a booster amplifier at the mode-locked laser output.

Main Results:

Achieved a 3 GHz repetition frequency mode-locked laser.
Amplified output power by up to 10.5 dB using the integrated booster amplifier.
Reached average on-chip output powers of 11 dBm.

Conclusions:

Heterogeneous integration via micro-transfer printing effectively enhances output power in mode-locked lasers.
The demonstrated approach overcomes a key limitation for integrated photonic comb sources.
This technology paves the way for more powerful integrated lasers in various applications.