Solution-processed SnO2/SnS2 bilayer-based robust memristors for reliable neuromorphic computing

Xiuyang Tang1, Xinming Ma1, Sizhu Ha1

  • 1Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, Department of Applied Chemistry, State Key Laboratory of Crystal Materials, Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, No. 391 Binshui Xidao, Xiqing District, Tianjin 300384, P. R. China. caigangri@sina.com.

Nanoscale Horizons
|February 25, 2026
PubMed
Summary

Researchers developed novel tin oxide/tin disulfide bilayer thin films for advanced memory devices. These solution-processed films enable efficient resistive switching and emulate synaptic functions for neuromorphic computing.