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Solution-Processed ReS2/FAPbI3/p-Si Dual Type-II van der Waals Heterojunctions for Ultrahigh Modulation Depth and

Binchao Sun1, Xunjun He1, Mingzhong Wu1

  • 1School of Electrical and Electronic Engineering, Harbin University of Science and Technology, Harbin 150080, China.

ACS Applied Materials & Interfaces
|February 26, 2026
PubMed
Summary
This summary is machine-generated.

Researchers developed a stable, high-performance terahertz modulator using a novel ReS2/FAPbI3/p-Si heterojunction. This device achieves over 99% modulation depth and maintains performance for six months, overcoming limitations of current terahertz modulators.

Keywords:
dual type-II band alignmentenvironmental stabilitysolution processingterahertz modulationvan der Waals heterojunction

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Condensed Matter Physics

Background:

  • Organic-inorganic hybrid perovskites show potential for terahertz (THz) modulators.
  • Existing devices face challenges with low modulation depth and environmental instability.
  • These limitations hinder practical applications in THz technologies.

Purpose of the Study:

  • To develop a high-performance and environmentally stable THz modulator.
  • To overcome the limitations of current perovskite-based THz modulators.
  • To explore the potential of dual type-II van der Waals heterojunctions for THz applications.

Main Methods:

  • Fabrication of a ReS2/FAPbI3/p-Si dual type-II van der Waals heterojunction THz modulator via a solution-processed method.
  • Characterization of the device's modulation depth across a broadband THz range (0.2-1.0 THz) under 800 nm laser illumination.
  • Assessment of the device's long-term environmental stability under constant and cyclic humidity conditions.

Main Results:

  • Achieved a modulation depth exceeding 99% in the 0.2-1.0 THz range.
  • Demonstrated remarkable environmental stability, retaining over 95% modulation depth after six months under 60% relative humidity.
  • The dual type-II heterojunction structure effectively enhanced device performance and stability.

Conclusions:

  • The ReS2/FAPbI3/p-Si heterojunction offers a cost-effective and versatile strategy for high-performance THz modulators.
  • The developed device shows significant promise for applications in THz imaging, communication, and signal processing.
  • This work paves the way for more robust and efficient THz modulation technologies.