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Related Concept Videos

P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Related Experiment Video

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In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation
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A P-Type Organic Dye as Interface Layer for Efficient and Stable Inverted Perovskite Solar Cells.

Mingming Zhao1,2, Limei Wu1, Kun Gong1

  • 1School of Chemical Engineering and Technology, Tianjin University, Tianjin, P. R. China.

Small (Weinheim an Der Bergstrasse, Germany)
|February 26, 2026
PubMed
Summary

Interface modification using TPA-CN organic dye enhances nickel oxide (NiOx) in perovskite solar cells (PSCs). This boosts efficiency and significantly improves long-term operational stability, addressing key degradation issues.

Keywords:
defect passivationinverted perovskite solar cellsp‐DSSCself‐assembled monolayers

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Area of Science:

  • Materials Science
  • Renewable Energy
  • Photovoltaics

Background:

  • Nickel oxide (NiOx) is a key hole-transport material in inverted perovskite solar cells (PSCs).
  • Light-induced degradation at the NiOx-perovskite interface limits PSC operational lifetime.
  • Interface engineering is crucial for improving PSC performance and stability.

Purpose of the Study:

  • To investigate the use of TPA-CN organic dye as a self-assembled monolayer (SAM) for interface modification in inverted PSCs.
  • To enhance the performance and long-term stability of NiOx-based inverted PSCs.
  • To understand the molecular mechanisms behind interface passivation and charge transfer.

Main Methods:

  • Utilized TPA-CN as SAM molecules for interface modification between NiOx and perovskite layers.
  • Characterized the passivating effects of TPA-CN on Ni3+ and Pb2+ defects.
  • Analyzed charge transfer dynamics and device performance metrics (PCE).
  • Assessed device stability under prolonged light illumination and ambient conditions.

Main Results:

  • TPA-CN SAMs effectively passivated Ni3+ defects in NiOx and undercoordinated Pb2+ in perovskite, reducing trap density.
  • Enhanced hole extraction and charge transfer from perovskite to NiOx were observed.
  • Achieved a peak power conversion efficiency (PCE) of 25.54% for modified devices, compared to 21.80% for control devices.
  • Unencapsulated devices retained 89.2% of initial PCE after 1800 h (ISOS-D-1) and 95.3% after 500 h of 1-sun illumination.

Conclusions:

  • TPA-CN serves as an effective molecular bridge, improving both performance and stability of inverted PSCs.
  • This molecular design approach offers a viable strategy for developing high-performance, stable perovskite solar cells.
  • Interface engineering with SAMs is a promising route for overcoming degradation challenges in PSCs.