Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.7K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.7K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Electrophoretic deposition-assisted layer-by-layer construction of carbon nanotube-MnO<sub>2</sub>-based hybrid biofilm for supercapacitive microbial fuel cells.

Colloids and surfaces. B, Biointerfaces·2026
Same author

Visible-Light-Induced Difunctionalization of Alkenes with Masked Trifluoroacetyl Reagents.

Organic letters·2026
Same author

Nonlinear periodic orbit solutions and their bifurcation structure at the origin of soliton hopping in coupled microresonators.

Communications physics·2026
Same author

High-pulse-energy integrated mode-locked laser using a Mamyshev oscillator.

Nature·2026
Same author

Risk factors for acute kidney injury after nephron-sparing surgery in sporadic renal angiomyolipoma: a multicenter retrospective cohort study.

BMC surgery·2026
Same author

Notch signaling governs colorectal cancer metastasis via transcriptional control of TGF-β effectors SMAD2/SMAD3.

British journal of cancer·2026
Same journal

Kat5 deficiency in alveolar type II cells licenses STAT6-driven glycolytic reprogramming and pulmonary fibrosis.

Nature communications·2026
Same journal

Continuous nonthermal slab gap formed by progressive tearing beneath Northeast Asia.

Nature communications·2026
Same journal

Zeolitic isolated protonic acid sites-mediated NH<sub>3</sub> storage for robust NO<sub>x</sub> removal.

Nature communications·2026
Same journal

Coaxially nested component with asymmetric fiber resonant cavity and separation membrane for gaseous and dissolved gases detection.

Nature communications·2026
Same journal

Near-unity charge readout signal in a nonlinear resonator without matching the sensor dissipation.

Nature communications·2026
Same journal

Prokaryotic Schlafen proteins cleave tRNAs during type III CRISPR immunity.

Nature communications·2026
See all related articles

Related Experiment Video

Updated: Feb 28, 2026

Step-by-Step Guide for Harnessing Organic Light Emitting Diodes by Solution Processed Device Fabrication of a TADF Emitter
06:25

Step-by-Step Guide for Harnessing Organic Light Emitting Diodes by Solution Processed Device Fabrication of a TADF Emitter

Published on: November 7, 2025

618

Copper damascene process-based high-performance thin-film lithium tantalate modulators.

Mengxin Lin1,2, Zihan Li1,2, Alexander Kotz3

  • 1Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.

Nature Communications
|February 26, 2026
PubMed
Summary
This summary is machine-generated.

Researchers developed a scalable fabrication method for thin-film lithium tantalate modulators using the copper Damascene process. This integration enhances compatibility with microelectronics, improving performance for optical communication systems.

More Related Videos

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
06:49

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates

Published on: April 12, 2019

8.2K
Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
11:09

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Published on: June 23, 2017

10.8K

Related Experiment Videos

Last Updated: Feb 28, 2026

Step-by-Step Guide for Harnessing Organic Light Emitting Diodes by Solution Processed Device Fabrication of a TADF Emitter
06:25

Step-by-Step Guide for Harnessing Organic Light Emitting Diodes by Solution Processed Device Fabrication of a TADF Emitter

Published on: November 7, 2025

618
Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
06:49

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates

Published on: April 12, 2019

8.2K
Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
11:09

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Published on: June 23, 2017

10.8K

Area of Science:

  • Photonics and Materials Science
  • Integrated Optics
  • Semiconductor Fabrication

Background:

  • Electrical-to-optical signal conversion is crucial for optical communications, demanding co-integration with electronics.
  • Thin-film lithium tantalate (TFLN) is a promising electro-optic platform but faces integration challenges with microelectronic processes.

Purpose of the Study:

  • To develop an electronics-compatible fabrication approach for TFLN modulators.
  • To improve the performance and scalability of TFLN-based electro-optic devices.

Main Methods:

  • Incorporation of the copper Damascene process into TFLN modulator fabrication.
  • Characterization of microwave loss, optical power handling, and voltage stability.
  • High-speed data transmission experiments using PAM4 and PAM8 modulation.

Main Results:

  • The copper Damascene process enables scalable, electronics-compatible TFLN modulator fabrication.
  • Devices show ~10% lower microwave loss compared to gold-electrode designs.
  • Watt-level optical power handling and stable quasi-static half-wave voltage (1 Hz–1 MHz) were achieved.
  • Demonstrated high-speed transmission rates of 416 Gbit/s (PAM4) and 540 Gbit/s (PAM8).

Conclusions:

  • The copper Damascene process offers a practical route for scalable integration of TFLN electro-optic modulators with microelectronics.
  • This advancement facilitates chip-on-wafer integration for next-generation optical communication systems.