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InGaN Laser Diode with Spin-on-Glass Isolation Fabricated by Planarization and Etch-Back Process.

Katarzyna Piotrowska-Wolińska1, Szymon Grzanka1, Łucja Marona1

  • 1Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland.

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|February 27, 2026
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Summary

Spin-on-glass (SOG) offers a cost-effective alternative for insulating InGaN laser diodes. This method improves fabrication and achieves stable laser operation, paving the way for scalable photonic applications.

Keywords:
SOGgallium nitridelasersplanarization

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Area of Science:

  • Semiconductor Physics
  • Materials Science
  • Photonics

Background:

  • Indium Gallium Nitride (InGaN) laser diodes are crucial for advanced photonic applications.
  • Conventional fabrication methods using silicon dioxide (SiO2) present challenges in terms of processing complexity and cost.
  • Improved insulation and planarization techniques are needed for scalable InGaN laser diode manufacturing.

Purpose of the Study:

  • To investigate the use of spin-on-glass (SOG) as an insulation and planarization layer in InGaN-based ridge-waveguide laser diodes.
  • To compare the SOG approach with conventional silicon dioxide (SiO2) methods.
  • To evaluate the electrical and optical characteristics and operational stability of SOG-insulated laser diodes.

Main Methods:

  • Fabrication of InGaN laser diodes on GaN substrates using Metalorganic Chemical Vapor Deposition (MOCVD).
  • Growth of In0.11Ga0.89N quantum wells for the active region.
  • Application of spin-on-glass (SOG) for insulation and planarization, followed by an etch-back process for electrical contact formation.
  • Characterization of insulating surfaces and device performance under pulsed and continuous-wave (CW) conditions, utilizing a Nickel (Ni) protective layer.

Main Results:

  • Successful formation of high-quality insulating surfaces with excellent adhesion to ridge sidewalls using SOG.
  • Demonstration of favorable electrical and optical characteristics in the fabricated InGaN laser diodes.
  • Achieved stable laser operation under both pulsed and continuous-wave (CW) conditions.

Conclusions:

  • Spin-on-glass (SOG) is a viable and promising alternative for insulating InGaN laser diodes.
  • The SOG approach offers improved surface planarity, reduced processing complexity, and lower fabrication costs compared to traditional SiO2 methods.
  • This technique enables scalable and cost-effective manufacturing of InGaN laser diodes for advanced photonic applications.