Structure-Dependent Parameter Trade-Off Optimization on R_onC_off and Power Compression of AlGaN/GaN HEMTs for RF...

This paper presents, for the first time, the structure-dependent parameter trade-off optimization on figure-of-merit (R_onC_off) and power compression of AlGaN/GaN high electron mobility transistors (HEMTs) for radio frequency (RF) switch applications. For GaN HEMTs operating in switching mode, it was demonstrated that R_onC_off can be effectively reduced by increasing the gate foot length (L_{g_foot}), decreasing the gate cap length (L_{g_cap}), reducing the gate bias resistance (r_g), and adopting a high work function metal for the gate electrode (Φ_g). However, these parameter adjustments affect power compression and R_onC_off in opposing manners. This paper also presents supplementary research on the effects of source-drain spacing (L_ds) and gate width (W_g) on switching performance. This research achieves a dynamic balancing method for structural parameters, delivering application-specific design rules for different scenarios ranging from high-frequency to high-power applications.