Simulation and Experimental Study of Multi-Grain Diamond Cutting of Monocrystalline Silicon

Diamond wire sawing, as the core process for monocrystalline silicon wafering, has gained widespread application in the photovoltaic and microelectronics industries due to its high efficiency and low material loss. This study investigates the cutting mechanism of monocrystalline silicon with (100) crystal orientation under multi-abrasive and multi-scratch conditions using explicit finite element dynamics simulation. It focuses on analyzing the effects of radial spacing and height difference between abrasive grains on surface morphology, cutting force, and residual stress. Based on the Johnson-Holmquist-II (JH-II) constitutive model, a high-precision three-dimensional finite element simulation model was constructed. Simulation results indicate that the spacing and height difference between abrasive grains significantly affect the grain-to-grain coupling, thereby influencing the peak cutting force and the surface damage characteristics of the scratches. To address cutting force and residual stress responses, this study proposes an algorithmic optimization scheme based on a multifactor orthogonal experimental design. The analysis indicates that the optimal parameters-U = 1385 m/min, V = 142°, and W = 6.2 μm-reduce residual stress by 33% and cutting force by 75%.