A High-Sensitivity MEMS Piezoresistive Pressure Sensor for Intracranial Pressure Monitoring

Area of Science:

• Biomedical Engineering
• Medical Device Technology
• Sensor Development

Background:

• Accurate intracranial pressure (ICP) monitoring is crucial for diagnosing and managing neurological disorders.
• Existing ICP sensors often lack the sensitivity needed to detect subtle pressure changes, impacting patient care.
• There is a significant need for highly sensitive ICP sensors to enhance measurement accuracy and improve patient outcomes.

Purpose of the Study:

• To propose and develop a highly sensitive and precise pressure sensor for intracranial pressure (ICP) monitoring.
• To enhance sensor sensitivity and linearity through theoretical optimization of a beam-membrane-island structure.
• To experimentally validate the performance of the novel ICP sensor design.

Main Methods:

• Theoretical design and optimization of a beam-membrane-island structure, including notches at the beam end, to enhance sensitivity and linearity compared to traditional flat membrane structures.
• Experimental fabrication and testing of the proposed ICP sensor.
• Performance evaluation focusing on sensitivity and nonlinearity.

Main Results:

• The developed sensor demonstrated a high sensitivity of 1.59 mV/V//kPa.
• The sensor exhibited excellent linearity with a nonlinearity of -0.22% F.S.
• The sensor achieved a resolution capable of detecting pressure variations in centimeter water column (cm H2O), suitable for clinical ICP monitoring.

Conclusions:

• The novel beam-membrane-island structure significantly enhances ICP sensor sensitivity and linearity.
• The developed sensor meets the required resolution and precision for effective intracranial pressure monitoring.
• This technology presents promising applications in the field of advanced medical devices for neurological care.