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Related Concept Videos

Semiconductors01:22

Semiconductors

1.7K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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IR Frequency Region: Fingerprint Region01:03

IR Frequency Region: Fingerprint Region

2.1K
IR spectra are divided into two main regions: the diagnostic region and the fingerprint region. The diagnostic region of the spectrum lies above 1500 cm−1. The absorptions resulting from single-bond vibrations of the N–H, C–H, and O–H stretch at higher wavenumbers and appear on the left side of the spectrum. The stretching absorptions of the C≡C and C≡N occur between 2100–2300 cm−1. In contrast, those arising from stretching absorptions of the...
2.1K
Infrared (IR) Spectroscopy: Overview01:09

Infrared (IR) Spectroscopy: Overview

5.6K
When electromagnetic radiation passes through a material, atoms or molecules transition from a lower to a higher energy state by absorbing radiation corresponding to the energy difference between the two states. The absorption of infrared (IR) radiation causes transitions between vibrational energy levels in a molecule. Therefore, IR spectroscopy is a useful analytical tool for determining the molecular structure of molecules.
Different compounds display unique properties due to their...
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Related Experiment Video

Updated: Feb 28, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

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Recent Progress in Silicon-Based On-Chip Integrated Infrared Photodetectors.

Yu He1,2, Hongling Peng1, Peng Cao1

  • 1Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

Sensors (Basel, Switzerland)
|February 27, 2026
PubMed
Summary

Silicon-based infrared photodetectors offer a cost-effective, miniaturized solution for advanced sensing. This review covers Group IV, III-V, and 2D materials for next-generation optoelectronics.

Keywords:
heterogeneous integrationinfrared photodetectorson-chip integrationsilicon photonics

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Area of Science:

  • Optoelectronics and Photonics
  • Materials Science
  • Semiconductor Devices

Background:

  • Infrared (IR) photodetectors are crucial for various applications but face limitations like high cost and bulky cooling requirements.
  • Traditional bulk semiconductor detectors hinder Size, Weight, and Power (SWaP)-sensitive applications.
  • Silicon-based integration with CMOS processes offers a path to miniaturized, cost-effective photonic integrated circuits (PICs).

Purpose of the Study:

  • To review recent advancements in silicon-based infrared photodetectors.
  • To explore progress across Group IV (Ge/GeSn), III-V, and 2D material systems.
  • To provide an outlook on future intelligent sensing systems through optoelectronic convergence.

Main Methods:

  • Review of current literature and research on silicon-based IR photodetectors.
  • Analysis of material systems including Group IV, III-V compounds, and 2D materials.
  • Discussion of integration with CMOS technology for on-chip sensing and data transmission.

Main Results:

  • Significant progress has been made in developing silicon-based IR photodetectors.
  • Different material systems (Ge/GeSn, III-V, 2D) show promise for specific IR detection needs.
  • On-chip integration enables enhanced functionality for miniaturized optoelectronic systems.

Conclusions:

  • Silicon-based IR photodetectors are a key technology for overcoming limitations of traditional detectors.
  • Continued development in material science and integration will drive the creation of next-generation intelligent sensing systems.
  • Optoelectronic convergence is paving the way for advanced, compact, and efficient IR sensing solutions.