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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...

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Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
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Lithography-Patterned Nafion Interlayers Enable High-Injection Contacts in p-MoTe2 FETs.

Sewoong Oh1, Jeehong Park1, Yeonjin Yi1

  • 1Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.

ACS Applied Materials & Interfaces
|February 27, 2026
PubMed
Summary
This summary is machine-generated.

Electron-beam lithography creates ultrathin Nafion interlayers for site-selective contact engineering in p-type MoTe2 transistors. This method enhances device performance by reducing contact resistance and improving hole injection.

Keywords:
ContactElectron-beam lithographyFour-terminal measurementNafionPatterningSite-selective dopingTMD

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Contact resistance significantly hinders the performance of 2D material-based transistors.
  • Efficient charge injection is crucial for optimizing field-effect transistor (FET) characteristics.
  • Developing site-selective methods for contact engineering is essential for advanced electronic devices.

Purpose of the Study:

  • To develop a lithography-compatible method for site-selective contact engineering in p-type MoTe2 FETs.
  • To investigate the impact of ultrathin Nafion interlayers on charge injection and device performance.
  • To mitigate contact resistance and Fermi-level pinning in MoTe2 transistors.

Main Methods:

  • Site-selective patterning of ultrathin Nafion interlayers using electron-beam lithography.
  • Fabrication of p-type MoTe2 field-effect transistors with patterned Nafion at source/drain contacts.
  • Electrical characterization using two-terminal and four-terminal measurements.

Main Results:

  • Nafion interlayers facilitated localized charge transfer, p-doping the MoTe2 interface and narrowing the Schottky barrier.
  • Nafion-contacted devices exhibited a 2-fold increase in on-state current and more linear output.
  • Field-effect mobility improved up to 10 cm²/V·s, with convergence of two- and four-terminal mobilities indicating reduced contact resistance.

Conclusions:

  • Site-selective patterning of Nafion via electron-beam lithography is a practical approach for contact engineering in 2D materials.
  • This method effectively reduces contact resistance and Fermi-level pinning in p-type MoTe2 transistors.
  • The developed technique offers a promising route toward improved MoTe2-based electronic devices.