Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

906
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
906
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

1.6K
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
1.6K
Cascaded Op Amps01:16

Cascaded Op Amps

1.2K
Operational amplifiers (op-amps) are versatile electronic components that can be interconnected in a cascade - one after another in a linear sequence. This cascading is possible due to their infinite input resistance and zero output resistance, allowing them to maintain their input-output relationships even when connected in series.
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
1.2K
Biasing of FET01:22

Biasing of FET

792
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
792
Design Example: Forces in Sluice Gate01:11

Design Example: Forces in Sluice Gate

3.3K
In hydraulic engineering, sluice gates are essential for managing water flow through channels, reservoirs, and irrigation systems. Sluice gates, acting as vertical barriers, regulate water by adjusting the gate's opening height, which changes the velocity and pressure of water flowing beneath the gate. Understanding the forces involved is crucial to designing sluice gates that can withstand dynamic pressure differences, especially when the gate is closed or partially open.
Key variables in...
3.3K
Inverting and Non-inverting OpAmps01:20

Inverting and Non-inverting OpAmps

1.9K
In an inverting amplifier, the input voltage is connected through a resistor to the inverting terminal. Meanwhile, the non-inverting terminal is grounded and a feedback resistor is established between the inverting and output terminal, as depicted in Figure 1.
1.9K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Terminal Hydroxylated Side-Chains Enhance Ionic-Electronic Coupling Efficiency in Small-Molecule Semiconductors.

Angewandte Chemie (International ed. in English)·2026
Same author

Efficacy and safety of stapokibart in adolescents with moderate-to-severe atopic dermatitis: a multicentre randomized double-blind placebo-controlled phase III trial.

The British journal of dermatology·2026
Same author

Correction: Case Report: Synergistic effects of an <i>ASXL3</i> mutation and a 15q11.2 BP1-BP2 microdeletion in a severe neurodevelopmental phenotype.

Frontiers in genetics·2026
Same author

The IL17REL gene encodes a decoy receptor of IL-17 family cytokines to control gut inflammation.

Nature immunology·2026
Same author

Case Report: Synergistic effects of an <i>ASXL3</i> mutation and a 15q11.2 BP1-BP2 microdeletion in a severe neurodevelopmental phenotype.

Frontiers in genetics·2025
Same author

Ivarmacitinib ointment in treatment of adults with mild-to-moderate atopic dermatitis: phase III of a randomized double-blind placebo-controlled phase II/III clinical trial.

The British journal of dermatology·2025
Same journal

Interfacial stabilization enabled by triethyl borate for high-voltage batteries with a wide temperature range.

Materials horizons·2026
Same journal

Bioinspired edible vesicles as standardized nanoestrogens for safe bone remodeling in osteoporosis.

Materials horizons·2026
Same journal

MOF glass-based membranes: a promising platform for advanced separation.

Materials horizons·2026
Same journal

Modulating tris-acid integrated proton-confined motifs for efficient uranium extraction from natural seawater.

Materials horizons·2026
Same journal

Hydrodynamic rotational amplifiers with direction controllability, rotational hysteresis, nonreciprocity, and venturi effect.

Materials horizons·2026
Same journal

<i>Materials Horizons</i> Emerging Investigator Series: Professor Michael T. Yeung, University at Albany, SUNY, United States.

Materials horizons·2026
See all related articles

Related Experiment Video

Updated: Mar 3, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.1K

Side gate vertical OECTs for integrated complementary circuits.

Guohong Hu1, Sihui Hou1, Qijun Cai1

  • 1School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, China. whuang@uestc.edu.cn.

Materials Horizons
|March 2, 2026
PubMed
Summary
This summary is machine-generated.

Optimizing gate dimensions in side gate organic electrochemical transistors (OECTs) significantly enhances performance. This research provides a design strategy for high-performance OECTs and integrated bioelectronic circuits.

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.4K

Related Experiment Videos

Last Updated: Mar 3, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.1K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.4K

Area of Science:

  • Organic electronics
  • Bioelectronics
  • Neuromorphic computing

Background:

  • Organic electrochemical transistors (OECTs) offer biocompatibility and mixed ionic-electronic conduction.
  • Side gate OECTs present advantages for integration and commercialization over floating gate designs.
  • Further development is needed to optimize side gate OECTs for advanced applications.

Purpose of the Study:

  • To investigate the impact of gate size and gate-channel distance on vertical OECT (vOECT) performance.
  • To establish a strategy for optimizing the design of side gate OECTs.
  • To demonstrate the potential for miniaturization and integration of OECT-based circuits.

Main Methods:

  • Precisely modulating side gate dimensions (gate size, SG; gate-channel distance, DGC) using high-resolution printed silver gates and photo-patternable channels.
  • Fabricating Homo-gDPP-based vOECTs with controlled SG and DGC.
  • Integrating high-density complementary circuits using optimized vOECTs.

Main Results:

  • vOECT performance, including on-current, transconductance, and on/off ratio, varied significantly with SG and DGC.
  • Champion performance metrics achieved at SG = 1600 µm2 and DGC = 15 µm.
  • Fastest switching speeds (<9 ms) reported for side gate OECT circuits using PEG-LiCl electrolyte.

Conclusions:

  • Optimal gate dimension engineering is crucial for enhancing side gate OECT performance.
  • The findings provide a roadmap for designing and fabricating high-performance, integrated OECT devices.
  • This work paves the way for next-generation miniaturized electronics utilizing OECT technology.