High-Performance Blue Quantum Dot Light-Emitting Diodes via ZnSe-Engineered Core/Shell Quantum Dots
Ke He1,2,3, Jianpeng Ma2,3, Ye Zhang2,3
1State Key Laboratory of Bioinspired Interfacial Materials Science, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, P. R. China.
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Quantum dot light-emitting diodes (QLEDs) have emerged as strong contenders for next-generation display technologies. However, the commercialization of blue QLEDs has been severely hindered by the inherent wide band gap of blue quantum dots (QDs), which results in a high hole injection barrier and imbalanced carrier injection. Herein, we demonstrate high-efficiency and high-luminance blue QLEDs by engineering gradient core/shell ZnCdSe/ZnSe/ZnSeS/ZnS QDs with a ZnSe intermediate shell layer. The ZnSe interlayer not only effectively passivates surface defects but also facilitates balanced carrier injection. This strategy achieves a remarkable maximum luminance of 54,554 cd m-2 and an external quantum efficiency (EQE) of 20.6%, representing a significant advancement in device performance. This work provides a strategy for developing high-performance blue QLEDs.
