High-Performance Blue Quantum Dot Light-Emitting Diodes via ZnSe-Engineered Core/Shell Quantum Dots.
Ke He1,2,3, Jianpeng Ma2,3, Ye Zhang2,3
1State Key Laboratory of Bioinspired Interfacial Materials Science, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, P. R. China.
ACS Applied Materials & Interfaces
|March 2, 2026
Summary
High-efficiency blue quantum dot light-emitting diodes (QLEDs) were achieved using a novel ZnSe interlayer. This engineering strategy overcomes carrier injection barriers, paving the way for advanced display technologies.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Quantum dot light-emitting diodes (QLEDs) are promising for next-generation displays.
- Commercialization of blue QLEDs is limited by wide band gaps, leading to poor carrier injection.
Purpose of the Study:
- To develop high-efficiency and high-luminance blue QLEDs.
- To address the challenges of hole injection barriers and imbalanced carrier injection in blue QLEDs.
Main Methods:
- Engineered gradient core/shell ZnCdSe/ZnSe/ZnSeS/ZnS quantum dots (QDs).
- Incorporated a ZnSe intermediate shell layer to passivate surface defects and balance carrier injection.
Main Results:
- Achieved a maximum luminance of 54,554 cd m-2.
- Reached an external quantum efficiency (EQE) of 20.6% for blue QLEDs.
- Demonstrated effective passivation of surface defects and balanced carrier injection.
Conclusions:
- The ZnSe interlayer strategy significantly enhances blue QLED performance.
- This approach offers a viable pathway for developing high-performance blue QLEDs for display applications.
