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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications

Xingfa Gao1,2, Yuzhen Huang1,2, Rixuan Wang1,2

  • 1Institute of Medical Engineering and Interdisciplinary Research, Medical Science and Technology Innovation Center, Shandong First Medical University & Shandong Academy of Medical Sciences, 250117, Jinan, China.

Light, Science & Applications
|March 2, 2026
PubMed
Abstract

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