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Updated: Mar 6, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Efficient spin-doublet near-infrared emission beyond 800 nm via intramolecular charge transfer in a quasi-planar
Lingfeng Xiang1, Shilong Yu1, Xiaotong Ji1
1State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, P. R. China. yjyu@jlu.edu.cn.
Abstract:
Donor-acceptor type near-infrared luminescent radicals were synthesized in high yields via an iodinated building block. The rigid, quasi-planar configuration promotes the formation of an intramolecular charge-transfer excited state with non-bonding characteristics. This ultimately leads to efficient deep-NIR emission beyond 800 nm, realizing a photoluminescence quantum efficiency as high as 21%.
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