Upwind electromigration of sub-10-nm metallic nano-interconnects

Youran Hong1, Tianqi Deng2, Xiyao Li1,3

  • 1Center of Electron Microscopy, State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, PR China.

Nature Communications
|March 6, 2026
PubMed
Summary

Surface atoms in nanoscale electronic devices unexpectedly migrate against electron flow, challenging established electromigration theories. This upwind atomic motion in refractory nano-interconnects impacts future electronic reliability.