Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

743
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
743
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

927
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
927
MOSFET01:16

MOSFET

1.5K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.5K
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

956
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
956
MOS Capacitor01:25

MOS Capacitor

1.7K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.7K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Scaling two-dimensional semiconductor nanoribbons for high-performance electronics.

Nature communications·2026
Same author

Growth of Low-Defect WSe<sub>2</sub> Film via High-Purity van der Waals Crystal Precursor.

ACS nano·2026
Same author

Cefiderocol resistance in a clinical ST11-KL64 hypervirulent Klebsiella pneumoniae isolate mediated by a novel CirA truncation and SHV-12 β-lactamase.

BMC microbiology·2026
Same author

Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Emergence of hypervirulent and carbapenem-resistant <i>Klebsiella pneumoniae</i> ST37: genomic and phenotypic characterization of virulence and resistance.

Frontiers in microbiology·2026
Same author

Wafer-Scale Single-Crystal WSe<sub>2</sub> Monolayers Using Substrate-Passivation-Driven Epitaxy.

ACS nano·2026
Same journal

Sandgrouse Feather-Inspired Multiscale Hierarchical Microstructured Surfaces via IICSA for Controlled Liquid Regulation.

Small methods·2026
Same journal

Smart Antibacterial Janus Fabric Based on PVDF/Ag-Decorated-MXene for Unidirectional Water Transport and Thermal Management.

Small methods·2026
Same journal

Synergistic Anion Confinement in a Poly(Ionic Liquid)/MOF Composite Electrolyte Decouples Ionic Conductivity and Mechanical Strength for High-Performance Solid-State Lithium Metal Batteries.

Small methods·2026
Same journal

Fractionation-Free Protein Corona Quantification Through Synchrotron-Based Small-Angle X-ray Scattering.

Small methods·2026
Same journal

Coronamicroparticle Arrays with Stable Superamphiphobicity.

Small methods·2026
Same journal

Spatial Tail Design in Ionizable Lipids Enhances the Safety and Efficacy of mRNA Delivery.

Small methods·2026
See all related articles

Related Experiment Video

Updated: Mar 11, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.3K

In-Plane Electrostatic Addressable Strain in MoS2 for Reconfigurable Homojunction Optoelectronics.

Xinchuan Du1, Yang Wang2, Yi Cui2

  • 1Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.

Small Methods
|March 10, 2026
PubMed
Summary
This summary is machine-generated.

We developed a new method to precisely control strain in 2D semiconductors using electric fields, enabling tunable electronic properties for advanced optical devices.

Keywords:
2D materials2D optoelectronicsTMDCstrain engineering

More Related Videos

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

10.2K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.6K

Related Experiment Videos

Last Updated: Mar 11, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.3K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

10.2K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.6K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Strain engineering is crucial for tuning electronic properties of 2D semiconductors.
  • Current methods using flexible substrates or MEMS are limited in scalability and integration.

Purpose of the Study:

  • To introduce a novel in-plane isolated gated architecture for electrostatic strain engineering in 2D materials.
  • To demonstrate large-range, tunable, and reversible in-plane uniaxial strain in suspended monolayer MoS2.

Main Methods:

  • Utilized an in-plane isolated gated architecture to create lateral electrostatic fields across suspended MoS2.
  • Employed in situ photoluminescence to quantify bandgap changes and strain.
  • Investigated strain-induced homojunction formation and its properties.

Main Results:

  • Achieved monotonic bandgap tuning from 1.83 eV to 1.66 eV, corresponding to over 3% in-plane strain.
  • Demonstrated a strain-defined homojunction with tunable rectification and photoconductive cutoff (640-785 nm).
  • Showcased a single device for wavelength-division multiplexing and polarization-resolved photodetection.

Conclusions:

  • Electrostatic-field-induced strain is a scalable, CMOS-compatible method for localized strain engineering in 2D materials.
  • This approach enables advanced functionalities for spectral sensing, polarization detection, and optical interconnects.