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Updated: Mar 12, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Asymmetric Polarization in FE/AFE Bilayer HZO Memcapacitors via Composition-Induced Built-in Bias

Junseok Kim1, Huiseong Shin1, Hyeonjung Park2

  • 1School of Electrical Engineering, College of Engineering, Korea University, Seoul 02841, Korea.

ACS Applied Materials & Interfaces
|March 10, 2026
PubMed

Keywords:
capacitance memory windowferroelectric/antiferroelectric bilayermemcapacitorneuromorphic computingreservoir computing

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