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Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications

Md Akram Ahmad1, Muzaffar Imam2, Bhubon Chandra Mech3

  • 1Department of Electrical, Electronics and Communication Engineering, Galgotias University, Greater Noida, 203201, India.

Scientific Reports
|March 11, 2026
PubMed
Abstract

Keywords:
2D materialAnalog/RFField-effect-transistor (FET)High-k materialNon-equilibrium Green’s function (NEGF)Transition metal dichalcogenide (TMD)

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