Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Semiconductors01:22

Semiconductors

1.8K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.8K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

747
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
747
Fermi Level Dynamics01:12

Fermi Level Dynamics

910
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
910
Types of Semiconductors01:20

Types of Semiconductors

1.6K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.6K
Fermi Level01:18

Fermi Level

2.1K
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
2.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Electrical Control and High-Bias Enhancement of Magnetoresistance in van der Waals Antiferromagnetic Spin-Filter Tunnel Field-Effect Transistor.

ACS nano·2026
Same author

Gate-Tunable Magnetoresistance in Antiferromagnetic van der Waals FePS<sub>3</sub> Transistors.

Nano letters·2026
Same author

Single-Ion Anisotropy-Stabilized Short-Period Helimagnetism in Frustrated Chiral Co<sub>5</sub>TeO<sub>8</sub>.

Research (Washington, D.C.)·2026
Same author

Sub-Terahertz Memristor Switches Using MoS<sub>2</sub> by Liquid-Liquid Interface Assembly.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Bulk and Surface Excitons in the van der Waals Magnet CrSBr: Magneto-Optical Studies to 55 T.

Nano letters·2026
Same author

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS<sub>2</sub> Memory Transistor.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026

Related Experiment Video

Updated: Mar 14, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.3K

Doping-Modulated Semiconductor-to-Metal Transformation in a Low-Band-Gap Two-Dimensional Material.

Qi Zhang1, Yaroslav Zhumagulov2, Mithun Ghosh1

  • 1Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.

ACS Nano
|March 12, 2026
PubMed
Summary

Doping transition metal dichalcogenides like PtSe2 enables tuning of electronic properties. This study demonstrates a broad conduction spectrum from n-type to metallic behavior in a single material, crucial for next-generation electronics.

Keywords:
carrier polarity controldopinglow-bandgap semiconductorsp-type TMDCsplatinum diselenidetwo-dimensional materials

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.6K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

Related Experiment Videos

Last Updated: Mar 14, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.3K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.6K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) transition metal dichalcogenides (TMDCs) offer potential for advanced semiconductor devices due to their unique electronic properties.
  • Modulating carrier polarity in a single 2D material system is critical for complementary metal-oxide-semiconductor (CMOS) integration but remains a significant challenge.
  • Low-bandgap TMDCs are sensitive to doping and can facilitate effective polarity tuning.

Purpose of the Study:

  • To investigate doping-driven transport modulation in a low-bandgap TMDC system.
  • To explore the potential of dilute transition metal doping for tuning the electronic properties of PtSe2.
  • To demonstrate a continuous transition of carrier polarity and conductivity within a single material platform.

Main Methods:

  • Utilized five-layer platinum diselenide (PtSe2), an air-stable, low-bandgap (∼0.1 eV) TMDC.
  • Incorporated dilute (∼2%) period-four transition metal dopants (V, Mn, Fe, Cr).
  • Characterized transport properties, including four-terminal (4T) resistivity and carrier density, using Hall effect measurements.

Main Results:

  • Achieved a continuous transition from intrinsic n-type to p-type semiconducting behavior with V and Mn doping.
  • Observed a heavily p-doped regime with Fe doping.
  • Demonstrated a transition to a fully metallic state with Cr doping, exhibiting low resistivity (∼200 Ω) and high hole carrier density (∼7.8 × 10^14 cm^-2).

Conclusions:

  • Dilute doping of PtSe2 enables precise control over its electronic properties, spanning the entire conduction spectrum from n-type to metallic.
  • This broad, doping-controlled conduction tunability within a single TMDC material is highly relevant for developing advanced CMOS technologies.
  • The study highlights the potential of low-bandgap 2D semiconductors for next-generation electronic applications.