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Related Experiment Video

Updated: Mar 14, 2026

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Dual-Band Ultraviolet Photodetection via a Single SiC/SiO2/Ga2O3 Core-Shell-Satellite Nanowire Heterojunction.

Shuangyang Ji1, Guodong Wei1, Jialei Chen1

  • 1Xi'an Key Laboratory of Compound Semiconductor Materials and Devices, School of Physics an Information Science, Shaanxi University of Science and Technology, Xi'an 710021, Shaanxi, People's Republic of China.

ACS Applied Materials & Interfaces
|March 12, 2026
PubMed
Summary

Researchers developed a novel dual-band ultraviolet (UV) photodetector using a SiC/SiO2/Ga2O3 nanowire heterojunction. This device selectively detects UVA and UVC radiation, offering enhanced performance for adaptive optoelectronic applications.

Keywords:
SiCUV photodetectorcore−shell-satellite heterostructureselective detectionsingle nanowirewide-bandgap semiconductor

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Nanotechnology

Background:

  • Ultraviolet (UV) photodetectors are crucial for environmental monitoring and optical communications.
  • A key challenge is achieving band-selective detection of UVA and UVC radiation in a single device.
  • Existing technologies often lack the adaptability required for diverse UV spectral applications.

Purpose of the Study:

  • To develop a novel dual-band UV photodetector capable of selective UVA and UVC detection.
  • To engineer a SiC/SiO2/Ga2O3 core-shell-satellite nanowire heterojunction for enhanced UV sensing.
  • To investigate the photophysical mechanisms governing the device's performance.

Main Methods:

  • Fabrication of a radial heterojunction using SiC core, SiO2 intermediate layer, and Ga2O3 satellite nanoparticles.
  • Engineering the energy band alignment of the heterostructure for selective photon absorption.
  • Characterization of device performance under UVA (365 nm) and UVC (254 nm) illumination.

Main Results:

  • Selective UVA detection via SiC core absorption.
  • Synergistic photoresponse for UVC detection involving Ga2O3 satellites and SiC core.
  • Achieved high responsivity (1547 A/W) and external quantum efficiency (5.3 × 10^5%) for UVC detection.
  • Demonstrated rapid response (98 ms) and recovery (93 ms) times for UVC detection.

Conclusions:

  • The novel SiC/SiO2/Ga2O3 heterojunction enables selective and adaptive dual-band UV detection.
  • The intermediate SiO2 layer facilitates carrier separation and transport, enhancing UVC performance.
  • This work advances multifunctional optoelectronic technologies and provides insights into complex heterojunction systems.