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Mitigating damage in GaN-based micro-LEDs by altering the sidewall crystal orientation via constructing hexagonal

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    Researchers developed a hexagonal Micro-LED to overcome size limitations in advanced displays. This novel structure significantly improves photoelectric properties, offering a pathway to high-efficiency, small-sized Micro-LEDs.

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    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Devices

    Background:

    • Gallium Nitride (GaN)-based Micro-LEDs face challenges due to size effects, limiting their use in sophisticated display technologies.
    • Traditional square Micro-LED structures are particularly susceptible to performance degradation as device dimensions decrease.

    Purpose of the Study:

    • To mitigate size effects in GaN-based Micro-LEDs.
    • To introduce a novel mesa-structured Micro-LED with a full m-faceted hexagonal facet.
    • To enhance the photoelectric properties of small-sized Micro-LEDs.

    Main Methods:

    • Fabrication of a mesa-structured Micro-LED with a full m-faceted hexagonal facet.
    • Comparison of the hexagonal Micro-LED with traditional square structures.
    • Analysis of size effects on external quantum efficiency (EQE).

    Main Results:

    • The hexagonal Micro-LED demonstrated improved resilience to dry etching and sidewall effects compared to square structures.
    • The peak EQE of the hexagonal Micro-LED decreased from 15.95% to 14.76% with decreasing size.
    • The peak EQE of the square Micro-LED decreased from 15.67% to 13.96% with decreasing size, showing a more pronounced decline.

    Conclusions:

    • The hexagonal Micro-LED design effectively suppresses size effects, leading to superior photoelectric performance.
    • This fabrication process offers a promising approach for developing next-generation small-sized, high-efficiency Micro-LEDs for advanced displays.