Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

1.2K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.2K
Semiconductors01:22

Semiconductors

1.8K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.8K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

6.4K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
6.4K
MOS Capacitor01:25

MOS Capacitor

1.7K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.7K
Debye–Huckel–Onsager Conductance Equation01:28

Debye–Huckel–Onsager Conductance Equation

71
The Debye-Hückel-Onsager equation is a cornerstone of physical chemistry, providing a method to determine the molar conductance (Λm) and molar conductance at infinite dilution (Λ°m) for uni-univalent electrolytes.Uni-univalent electrolytes are electrolytes that dissociate in solution to produce one cation with a +1 charge and one anion with a –1 charge per formula unit.This equation addresses two crucial phenomena: the asymmetry effect and the electrophoretic effect.
71

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Temperature-sensitive auditory neuropathy: long-term follow-up and genotypic correlation.

Orphanet journal of rare diseases·2026
Same author

Feasibility and safety of awake extracorporeal membrane oxygenation for operating room extubation after lung transplantation.

Journal of thoracic disease·2026
Same author

The Effectiveness of Three Steps Training in Clinical Reasoning for Clerkship Medical Students, a Pilot Trial in Nephrology Department.

Medical science educator·2026
Same author

Engineering inter-promoter spacing in baculovirus dual-expression systems enhances transcription and reduces rAAV2 empty capsids.

Molecular therapy. Advances·2026
Same author

Diffusion-Trap Mechanism-Mediated Trace Propylene Capture in a Microporous Metal-Organic Framework Enables Record Ethylene Purification From Cracking Gas.

Angewandte Chemie (International ed. in English)·2026
Same author

Nurse-Led Cardiac Telerehabilitation Sustains Telemonitoring at 17 Months: Follow-Up of a Randomised Trial.

Heart, lung & circulation·2026

Related Experiment Video

Updated: Mar 17, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

8.2K

A Layered Wide-Bandgap BiOF Gate Dielectric with a High Dielectric Constant.

Jiabiao Chen1, Xinyue Dong2,3, Yameng Hou1,4

  • 1Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China.

ACS Nano
|March 16, 2026
PubMed
Summary

Bismuth oxyfluoride (BiOF) offers a solution to the semiconductor scaling challenge, providing a wide bandgap and high dielectric constant. This novel material enhances two-dimensional (2D) device performance and overcomes traditional material limitations.

Keywords:
BiOFdouble encapsulationgate dielectricultrahigh-κwide bandgap

More Related Videos

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

9.3K
Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

11.7K

Related Experiment Videos

Last Updated: Mar 17, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

8.2K
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

9.3K
Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

11.7K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Semiconductor device downscaling requires gate dielectrics with wide bandgaps and high dielectric constants.
  • Conventional insulators face a trade-off between bandgap and dielectric response, limiting performance.

Purpose of the Study:

  • To identify and characterize a novel dielectric material overcoming the bandgap-dielectric constant trade-off.
  • To develop scalable synthesis methods for this new dielectric material.
  • To demonstrate its application in enhancing two-dimensional (2D) electronic devices.

Main Methods:

  • Synthesis of phase-pure bismuth oxyfluoride (BiOF) powder via a scalable solid-state route.
  • Chemical vapor deposition (CVD) for growing ultrathin BiOF nanosheets.
  • Integration of BiOF with few-layer graphene for device fabrication and characterization.

Main Results:

  • Bismuth oxyfluoride (BiOF) exhibits a wide bandgap (E_g ≈ 4.5 eV) and a high out-of-plane dielectric constant (κ = 22.5).
  • Ultrathin BiOF nanosheets possess stable dielectric properties and an inert van der Waals (vdW) surface.
  • BiOF-encapsulated graphene demonstrated superior electron Hall mobility (μ_e,2K ≈ 134,000 cm² V⁻¹ s⁻¹) and Shubnikov-de Haas oscillations.

Conclusions:

  • BiOF is a promising high-κ dielectric material that overcomes the intrinsic trade-off between bandgap and dielectric constant.
  • Its properties facilitate seamless integration with 2D materials, enhancing device performance.
  • This work expands the library of vdW materials for advanced electronic applications.