Dual-tuned terahertz cloaking via two-layer semiconductor

Recently, electromagnetic cloaking has received great attention and become a research hotspot for scientific and technological workers. This work has designed and studied a plasmonic cloak made of two-layer isotropic and homogeneous semiconductors (GaAs and InAs), based on the scattering cancelation cloaking (SCC) technology and the finite element method. Two terahertz cloaking frequencies can be simultaneously tuned by pressure and temperature, because the dielectric properties of GaAs and InAs are respectively modulated by pressure and temperature within the terahertz range. The low best cloaking frequency (LBCF) is obviously regulated by temperature (i.e., when the temperature rises up from 450 to 550 K, the LBCF can shift from 2.86 to 5.60 THz, and the scattering gain changes from -7.92 to -19.31dB.), and the high best cloaking frequency (HBCF) regulation is significant under pressure (i.e., while the pressure increases from 0 to 10 GPa, the HBCF moves from 8.46 to 9.47 THz, and the scattering gain can shift from -21.42 to -18.62dB). Theoretical calculations and numerical simulation results confirm that this invisibility cloak can achieve dual-tuned terahertz plasmonic cloaking. This provides an idea and approach for designing multi-layer cloak to realize multi-parameter-tuned SCC.