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Updated: Mar 19, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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Heterogeneously integrated waveguide-coupled InGaAs/InP SACM avalanche photodiodes on silicon nitride for 1550 nm.

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    Researchers developed integrated avalanche photodiodes (APDs) on silicon nitride waveguides for 1550nm wavelength. These devices achieve high gain and fast response, advancing silicon nitride photonics for optical communication.

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    Area of Science:

    • Photonics and Optical Engineering
    • Materials Science
    • Semiconductor Device Physics

    Background:

    • Silicon nitride (Si3N4) photonics offers ultra-low-loss waveguides, crucial for high-performance optical components.
    • Heterogeneous integration has enabled active photonic devices on Si3N4, but integrated avalanche photodiodes (APDs) with internal gain at 1550 nm were previously undemonstrated.

    Purpose of the Study:

    • To design, fabricate, and characterize InP/InGaAs separate absorption, charge, and multiplication (SACM) APDs heterogeneously integrated on Si3N4 waveguides.
    • To demonstrate the feasibility of high-gain APDs operating at 1550 nm within the silicon nitride photonic platform.

    Main Methods:

    • Heterogeneous integration of InP/InGaAs SACM APDs onto silicon nitride waveguides.
    • Fabrication and characterization of the integrated APD devices.
    • Performance evaluation including dark current, multiplication gain, responsivity, bandwidth, and data transmission.

    Main Results:

    • Achieved a dark current of 5 nA near breakdown at room temperature.
    • Demonstrated a high multiplication gain of 166 and an internal responsivity of 0.61 A/W at unity gain.
    • Obtained a 3-dB bandwidth of 4.2 GHz and showed open eye diagrams at 7.5 Gbps.

    Conclusions:

    • Successfully demonstrated the first integrated avalanche photodiode (APD) with internal gain on a silicon nitride waveguide platform for 1550 nm operation.
    • The developed APDs exhibit promising performance metrics, including high gain and fast response, suitable for advanced optical communication systems.
    • This work paves the way for advanced active photonic devices on Si3N4, enhancing its capabilities for integrated photonics.