Heterogeneous integrated III-V/Si laser with single-wavelength emission via longitudinal interference

The development of efficient O-band light sources on silicon is crucial for next-generation short-reach optical interconnects. While significant progress has been made in the C-band, the integration of III-V/Si lasers for the O-band presents distinct challenges, including the optimization of material gain and the implementation of robust single-mode selection mechanisms. In this work, we address these challenges by implementing a multi-cavity Vernier-effect III-V/Si laser architecture that requires neither fine-pitch Bragg gratings nor complex ring structures. By precisely controlling the longitudinal cavity lengths, the device achieves single-mode lasing with a side-mode suppression ratio (SMSR) exceeding 45 dB.