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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Ultrafast One-Dimensional Peierls-Distortion Dynamics in 1T^{'}-ReS_{2} Revealed by 4D Electron Microscopy.

Jingchao Liu¹, Shaozheng Ji¹, Lifu Zhang²

¹Nankai University, Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Tianjin 300071, China.

Physical Review Letters

|March 20, 2026

Summary

Rhenium disulfide (ReS_{2}) exhibits an ultrafast phase transition within 1 picosecond, driven by Peierls distortion relaxation. This discovery enables rapid control over anisotropic properties and metal-insulator transitions in 2D semiconductors.

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Rhenium disulfide (ReS_{2}) is a 2D semiconductor with anisotropic 1T^{'} structure.
Its properties are influenced by Peierls distortion, showing potential for optoelectronics.

Purpose of the Study:

To investigate the ultrafast phase transition dynamics in 1T^{'}-ReS_{2}.
To understand the role of Peierls distortion relaxation in this transition.

Main Methods:

Combined 4D electron microscopy and time-dependent density functional theory (TD-DFT) calculations.
Femtosecond laser pulse excitation.
Polarization-dependent transient absorption spectroscopy.

Main Results:

Observed an ultrafast phase transition within 1 picosecond (ps).
Revealed a one-dimensional Peierls-distortion relaxation from diamond clusters to zigzag chains.
Verified ultrafast relaxation via optical anisotropy changes.
TD-DFT predicted transient band-gap collapse due to carrier doping.

Conclusions:

The study reveals an ultrafast Peierls-distortion relaxation mechanism in 1T^{'}-ReS_{2}.
This transition is strongly correlated with photoexcited carrier doping.
Opens avenues for ultrafast control of anisotropy and metal-insulator transitions in 2D materials.