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Related Experiment Video

Updated: Jun 12, 2026

Direct Imaging of Laser-driven Ultrafast Molecular Rotation

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Published on: February 4, 2017

Femtosecond Laser Manipulation of Multistage Phase Switching in Two-Dimensional In₂Se₃ Visualized via an In Situ

Junqing Guo¹, Lifu Zhang², Meiling Zhang¹

¹Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071, China.

|March 27, 2025

Summary

Femtosecond lasers enable precise, rapid control over multiphase transitions in indium selenide (In2Se3) thin flakes. This breakthrough offers new possibilities for advanced electronic memory devices.

Keywords:

In2Se3 ferroelectric materials in situ TEM phase transition van der Waals materials

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Published on: November 22, 2019

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Phase transitions are crucial for material properties and device applications.
Two-dimensional (2D) indium selenide (In2Se3) exhibits complex phase switching and ferroelectric properties, but lacks precise control methods.
Existing challenges hinder the practical application of In2Se3 in devices.

Purpose of the Study:

To investigate the use of femtosecond (fs) lasers for precise multiphase transition control in 2D In2Se3.
To explore the dynamics of phase switching and associated property changes.
To provide foundational insights for optimizing memory devices.

Main Methods:

In situ transmission electron microscopy (TEM) with fs laser irradiation.
Controlled manipulation of laser fluence to induce phase transitions.
First-principles calculations to verify transition pathways and electronic structures.

Main Results:

Achieved controllable, fast phase switching between four phases of 2D In2Se3 using fs laser fluence.
Demonstrated reversible switching between antiferroelectric and paraelectric phases at room temperature.
Observed rapid changes in electrical conductivity linked to domain structure evolution and electronic band structure variations.

Conclusions:

Femtosecond laser irradiation is an effective tool for precise and rapid multiphase control in In2Se3.
Understanding the relationship between phase transitions, electronic structure, and conductivity is key for device applications.
This research lays the groundwork for developing advanced memory devices based on In2Se3.