Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

66
Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
66
Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

54
A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
54
Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

55
Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
55

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Synthesis of N-BOH Benzazaborines via a Modular GBB-Based Strategy.

Organic letters·2026
Same author

A palmitoylation signature for prognosis immune infiltration and drug sensitivity in esophageal carcinoma.

iScience·2026
Same author

Ethical Governance of Large Language Models in Health Care: Trust, Responsibility, and Equity in Routine Use.

Journal of medical Internet research·2026
Same author

APAdeg enhances differentially expressed gene inference by leveraging site-specific signals in APA-seq data.

Briefings in bioinformatics·2026
Same author

Cancer burden among adults aged 65 years and older in Asia, 1990-2023: a systematic analysis of the Global Burden of Disease Study 2023.

npj aging·2026
Same author

Direct Thermal Resistance Measurement of a Single Defect in Graphite.

ACS nano·2026
Same journal

Sub1 contributes to heart failure with preserved ejection fraction driven by aging in mice.

Nature communications·2026
Same journal

The BRCA1-A complex restricts replication fork reversal-dependent DNA repair in ATM deficient cells.

Nature communications·2026
Same journal

Signaling downstream of tumor-stroma interaction regulates mucinous colorectal adenocarcinoma apicobasal polarity.

Nature communications·2026
Same journal

Click-polymerized polyenamine membranes for efficient lithium extraction.

Nature communications·2026
Same journal

Joint trajectories of brain atrophy, white matter hyperintensities and cognition quantify brain maintenance.

Nature communications·2026
Same journal

Proton shuttling at electrochemical interfaces under alkaline hydrogen evolution.

Nature communications·2026
See all related articles

Related Experiment Video

Updated: Mar 25, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.7K

Point defects in monolayer WSi2N4 and MoSi2N4.

Jinmeng Tong1,2, Yu Cao1,2, Yuan-Kun Wang3

  • 1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, P. R. China.

Nature Communications
|March 24, 2026
PubMed
Summary
This summary is machine-generated.

Point defects in 2D WSi2N4 and MoSi2N4 semiconductors were explored. These defects significantly alter electronic properties, induce magnetic states, and enable defect self-organization for novel material engineering.

More Related Videos

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.3K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.8K

Related Experiment Videos

Last Updated: Mar 25, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.7K
Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.3K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.8K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Point defects are crucial for determining the properties of 2D semiconductors.
  • The atomic-scale characteristics of defects in the MoSi2N4 family are not well understood.

Purpose of the Study:

  • To systematically investigate point defects in monolayer semiconducting WSi2N4 and MoSi2N4.
  • To establish fundamental defect-property relationships in these emerging materials.

Main Methods:

  • Atomic-resolution scanning transmission electron microscopy (STEM).
  • First-principles calculations.

Main Results:

  • Ten distinct point defect types were identified, with Si-for-top-N antisites (SiN(t)), double-middle-N divacancies (VN(m)2), and double-top-N divacancies (VN(t)2) being most prevalent.
  • Defects were found to modulate carrier mobility, reduce bandgaps (potentially causing insulator-to-metal transitions), and create spin-polarized bands with magnetic moments.
  • Low-dimensional defect assemblies, such as 2D SiN(t) networks and 1D Si2Mo chains, were observed due to defect self-organization.

Conclusions:

  • The study provides a comprehensive understanding of point defects in WSi2N4 and MoSi2N4.
  • Findings offer insights for engineering electronic and magnetic properties through defect control in 2D semiconductors.