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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

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Addressing the Optical-Electrical Trade-Off via Rear Polished TOPCon Structures for Efficient Perovskite/Silicon

Xuefeng Hu¹, Haojiang Du², Xin Li²

¹Key Laboratory of Solid State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua 321004, China.

ACS Applied Materials & Interfaces

|March 24, 2026

Summary

This summary is machine-generated.

Researchers improved perovskite/silicon tandem solar cells by enhancing the p-type region passivation in the tunnel oxide passivating contact (TOPCon) bottom cell. This boosts efficiency and open-circuit voltage for next-generation solar technology.

Keywords:

TOPCon solar cells optical–electrical trade-off passivation contact performance and rear reflector perovskite/silicon tandem solar cells

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Area of Science:

Materials Science
Renewable Energy
Semiconductor Physics

Background:

Perovskite/silicon tandem solar cells (TSCs) are promising for commercialization.
Performance is limited by inadequate passivation in the p-type region of the tunnel oxide passivating contact (TOPCon) bottom cell.

Purpose of the Study:

To enhance passivation in the p-type region of TOPCon bottom cells.
To improve the performance of perovskite/silicon tandem solar cells.

Main Methods:

Replaced conventional textured rear surface with an alkaline-polished surface in the TOPCon bottom cell.
Utilized a rear SiNx/Ag reflector for optical compensation.

Main Results:

Achieved substantially enhanced passivation in the p-type TOPCon structure.
Obtained a high open-circuit voltage of 727 mV in the bottom cell (implied Voc of 737 mV).
Resulting perovskite/TOPCon tandem solar cell reached an open-circuit voltage of 1.964 V and 32.14% power conversion efficiency.

Conclusions:

Alkaline polishing of the rear surface significantly improves TOPCon bottom cell passivation.
Enhanced passivation and optical compensation lead to record performance in perovskite/TOPCon tandem solar cells.
This approach represents a viable pathway for advancing high-efficiency solar cell technology.