Related Experiment Video
Updated: Jul 9, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Nitrogen-Incorporated Silicon Dioxide Interlayer Enables Pinhole-Reduced and Robust TOPCon With a High Implied
Zunke Liu1, Changqing Lin2, Yueying Zhang1
1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo, P. R. China.
Nitrogen incorporation into Tunnel Oxide Passivated Contact (TOPCon) solar cells creates a robust SiOxNy interlayer. This innovation enhances thermal stability and reduces defects, significantly boosting solar cell efficiency and performance.
Area of Science:
- Materials Science
- Semiconductor Physics
- Renewable Energy
Background:
- Tunnel Oxide Passivated Contact (TOPCon) is crucial for high-efficiency crystalline silicon (c-Si) solar cells.
- Current TOPCon technology faces limitations due to the thermal fragility of the silicon dioxide (SiOx) interface, leading to pinholes and reduced passivation performance.
Purpose of the Study:
- To develop a more robust and stable interface for TOPCon solar cells.
- To improve the passivation performance and reduce defect density in TOPCon structures.
- To enhance the overall efficiency and scalability of TOPCon solar cell technology.
Main Methods:
- In situ doping of nitrogen (N) into amorphous silicon via plasma-enhanced chemical vapor deposition (PECVD).
- Formation of a silicon oxynitride (SiOxNy) interlayer during annealing.
- First-principles calculations to analyze bonding strength and thermal stability.
- Finite element simulations to assess thermal expansion matching and stress distribution.
Main Results:
- The SiOxNy interlayer exhibits significantly enhanced bonding strength and superior thermal stability compared to SiOx.
- SiOxNy demonstrates improved thermal expansion coefficient matching with c-Si and poly-Si, reducing stress concentration and pinhole density.
- Record passivation performance achieved with an implied open-circuit voltage of 760 mV and a recombination current density of 0.35 fA/cm2.
- Experimental front-junction TOPCon cells showed a 0.2% efficiency improvement.
Conclusions:
- Nitrogen incorporation into the TOPCon structure creates a robust SiOxNy interlayer, overcoming the limitations of traditional SiOx interfaces.
- This interface engineering strategy significantly enhances thermal stability, reduces defects, and boosts solar cell passivation performance.
- The developed method is simple, industry-compatible, and offers a scalable pathway for improving the efficiency of TOPCon and related solar cell technologies with minimal cost increase.
More Related Videos
09:20Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barrier Diode
Capacitor With A Dielectric
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
Types of Semiconductors