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Updated: Mar 27, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Longkun Que1, Changshun Yuan1, Yong Fan2
1School of Chemistry, Key Laboratory of Advanced Technologies of Materials (Ministry of Education), Southwest Jiaotong University, Chengdu 610031, P. R. of China.
Controlling graphene synthesis via chemical vapor deposition (CVD) requires understanding copper surface dynamics. This study reveals how nitrogen pretreatment modifies copper surfaces, enabling controlled graphene nucleation and growth for manufacturing applications.
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