CMOS-Compatible Fabrication Module for Sub-100 nm TiN and TaN Pillar Electrodes for Carbon Nanotube Test Structures

Guohai Chen1, Takeshi Fujii1, Takeo Yamada1

  • 1Nanocarbon Material Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Ibaraki, Japan.

Summary

A new fabrication module creates sub-100 nm titanium nitride (TiN) and tantalum nitride (TaN) pillar electrodes. This breakthrough supports the development of advanced nanoelectronic devices, including carbon nanotube-based nonvolatile random-access memory (CRAM).