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Published on: December 7, 2015
CMOS-Compatible Fabrication Module for Sub-100 nm TiN and TaN Pillar Electrodes for Carbon Nanotube Test Structures
Guohai Chen1, Takeshi Fujii1, Takeo Yamada1
1Nanocarbon Material Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Ibaraki, Japan.
A new fabrication module creates sub-100 nm titanium nitride (TiN) and tantalum nitride (TaN) pillar electrodes. This breakthrough supports the development of advanced nanoelectronic devices, including carbon nanotube-based nonvolatile random-access memory (CRAM).
Area of Science:
- Materials Science and Engineering
- Nanotechnology
- Electrical Engineering
Background:
- Sub-100 nm pillar electrodes are crucial for advanced nanoelectronic devices.
- Existing fabrication methods often lack the precision and compatibility required for emerging technologies.
- Titanium nitride (TiN) and tantalum nitride (TaN) are key materials for these electrodes.
Purpose of the Study:
- To develop a versatile, CMOS-compatible fabrication module for sub-100 nm TiN and TaN pillar electrodes.
- To demonstrate the integration of these electrodes into carbon nanotube-based nonvolatile random-access memory (CRAM) test structures.
- To establish a reproducible platform for nanoscale electrode fabrication.
Main Methods:
- Electron beam lithography for high-resolution hydrogen silsesquioxane (HSQ) mask definition.
- Optimized Ar/Cl2 inductively coupled plasma reactive ion etching for TiN film transfer.
- Optical emission spectroscopy for real-time etch endpoint detection.
- Buffered hydrogen fluoride treatment for residual HSQ removal.
- Atomic force microscopy (AFM) and conductive AFM for characterization.
Main Results:
- Achieved reproducible sub-100 nm TiN and TaN pillar electrodes with smooth sidewalls and an average taper angle of ~77°.
- Demonstrated successful integration into CRAM test structures, showing preliminary switching behavior.
- Verified electrical conductivity and geometric fidelity of the fabricated nanoscale features.
- Showcased fabrication of TiN pillar arrays, TaN pillars, and TiN line arrays.
Conclusions:
- The developed fabrication module is versatile, CMOS-compatible, and capable of producing high-quality nanoscale TiN and TaN electrodes.
- The module provides a feasible platform for laboratory-scale research and development of emerging memory and nanoelectronic technologies.
- This work paves the way for future integration of advanced nanoelectronic devices.
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