Related Experiment Video
Updated: Mar 29, 2026
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
Electrical Properties and Performance Enhancement of AlGaN/GaN/Si HEMTs
Hana Mosbahi1, Mohammed Khalil Mohammed Ali2, Malek Gassoumi3
1Laboratoire de Micro-Optoélectroniques et Nanostructures (LMON), Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, Monastir 5019, Tunisia.
None:
This study presents a detailed electrical analysis of AlGaN/GaN/Si HEMTs grown by molecular beam epitaxy, using direct and pulse current, small-signal microwave, and deep-level transient spectroscopy (DLTS) techniques to investigate transport characteristics and defect-related effects. DC measurements revealed self-heating effects and leakage currents, while RF analysis highlighted the devices' high-frequency capabilities alongside parasitic effects linked to deep-level traps. Pulsed I-V characterization demonstrated gate-lag and drain-lag behaviors associated with dynamic charge trapping. DLTS identified electron traps, emphasizing their critical role in device degradation and switching performance. The strong correlation between trap states and electrical behavior underlines the importance of defect control for enhancing efficiency and reliability.
Related Concept Videos
01:22MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
01:22Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...