A Physics-Consistent Framework for Semiconductor Device Reliability Including Multiple Degradation Mechanisms
Joseph B Bernstein1, Tsuriel Avraham1, Bin Wang2
1Department of Electrical and Electronic Engineering, Ariel University, Ariel 40700, Israel.
This study introduces a new framework for semiconductor device reliability, improving lifetime prediction by accounting for multiple degradation mechanisms. It offers a more accurate way to analyze device performance over time.
Area of Science:
- Materials Science
- Electrical Engineering
- Reliability Engineering
Background:
- Semiconductor device reliability assessment is complex due to multiple simultaneous degradation mechanisms.
- Conventional methods often use oversimplified assumptions, leading to uncertainty in lifetime predictions.
- Modern standards, like JEDEC, require more robust approaches for reliability testing.
Purpose of the Study:
- To present a general analytical framework for semiconductor device reliability.
- To explicitly accommodate multiple competing degradation mechanisms in reliability assessment.
- To improve the accuracy and robustness of lifetime prediction for semiconductor devices.
Main Methods:
- Developed a framework separating physical degradation processes from data interpretation models.
- Analyzed degradation behaviors with sublinear time dependence.
- Introduced a reformulated analytical representation for lifetime extraction.
Main Results:
- The framework allows combining independent mechanisms without imposing a physical model.
- Common data interpretation practices can introduce systematic errors with sublinear kinetics.
- The reformulated representation enhances clarity and robustness in lifetime extraction.
Conclusions:
- The proposed framework provides consistent reliability assessment and credible lifetime prediction.
- It is compatible with established reliability theory and modern JEDEC standards.
- The approach supports more accurate analysis across various materials, devices, and operating conditions.
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