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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Design and Optimization of a Twisted Photodiode Pixel Structure for All-Directional Phase-Detection Autofocus CMOS
Daiki Shirahige1,2, Koichi Fukuda2,3, Hajime Ikeda1
1Device Technology Development Headquarters, Canon Inc., Kawasaki 212-8602, Japan.
Abstract:
To achieve an all-directional and high-speed, high-accuracy autofocus (AF) function, we propose a CMOS image sensor with a Twisted Photodiode (PD) structure. The developed 3D-stacked back-side illuminated (BSI) sensor employs the Twisted PD, which enables equivalent angular response characteristics in both the horizontal and vertical directions for the two PDs integrated within a single pixel, thereby realizing AF detection for all pixels and all directions. This paper describes the Twisted PD structure that enables all-directional AF and presents an analysis of charge transfer behavior in this unique 3D configuration. In this paper, "all-directional" refers to robustness with respect to subject direction.

