Imperfections in Crystal Structure: Point, Line and Plane Defects
Imperfections in Crystal Structure: Stoichiometric Point Defects
Imperfections in Crystal Structure: Non-Stoichiometric Defects
Lattice Centering and Coordination Number
Metallic Solids
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Updated: Mar 31, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Jianxi Xu1,2, Yuning Wang2,3, Yu Xu1,2,4
1School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui, China.
Defects in 2D materials enable remote epitaxy (RE) by enhancing charge transfer, a mechanism crucial for integrating diverse materials and devices. This defect-induced charge transfer enhancement (DCTE) effect opens new avenues for advanced material integration.
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