Cryogenic etching device based on the conductive cooling method using liquid nitrogen bath

Area of Science:

• Materials Science
• Chemical Engineering
• Semiconductor Manufacturing

Background:

• Cryogenic etching is crucial for precise material processing, especially in semiconductor fabrication.
• Existing methods often face challenges with temperature control, coolant leakage, and complexity.
• There is a need for advanced cryogenic etching techniques offering improved reliability and control.

Purpose of the Study:

• To develop and demonstrate a novel cryogenic etching device with precise, real-time temperature control.
• To provide a reliable and simplified alternative to current cryogenic etching technologies.
• To validate the device's performance through anisotropic etching of SiO2 thin films.

Main Methods:

• Development of a cryogenic etching device employing liquid nitrogen conductive cooling.
• Integration of real-time electrode temperature monitoring and control.
• Experimental validation using trench-patterned silicon dioxide (SiO2) thin films.

Main Results:

• Achieved stable electrode temperatures as low as -170°C.
• Successfully demonstrated anisotropic etching of SiO2 thin films under cryogenic conditions.
• The developed apparatus features a simple structure and eliminates coolant leakage risks.

Conclusions:

• The novel cryogenic etching device offers precise real-time temperature control and enhanced reliability.
• Its simple design and operational advantages make it a promising tool for cryogenic etching research.
• This technology is expected to find wide application in advanced material processing and semiconductor manufacturing.