Breakdown of Ohm's Law by Disorders in Low-Dimensional Transistors

Area of Science:

• Materials Science
• Condensed Matter Physics
• Semiconductor Device Physics

Background:

• Ohm's law is fundamental to understanding electrical charge transport in conductors.
• Continuous scaling of Complementary Metal-Oxide-Semiconductor (CMOS) technologies relies on electrical scaling principles.
• Advancements in Moore's law necessitate exploring low-dimensional materials for higher transistor performance.

Purpose of the Study:

• To reveal the fundamental distinctions in charge transport between 3D and low-dimensional conductors.
• To investigate the impact of disorder-induced electron localization on electrical scaling.
• To develop a quantitative model for disordered regions in low-dimensional transistors.

Main Methods:

• Theoretical modeling of disorder-induced electron localization.
• Analysis of charge transport in low-dimensional materials.
• Experimental validation using atomically thin Indium Oxide (In2O3) field-effect transistors.

Main Results:

• Identified a fundamental breakdown of Ohm's law and lateral linear scaling in low-dimensional conductors.
• Developed a quantitative model characterizing the disordered region intrinsic to low-dimensional transistors.
• Demonstrated consistent explanation of experimental data in In2O3 transistors using the disorder-induced localization framework.

Conclusions:

• Established a unified physical picture for disorder-driven electronic transport in low-dimensional transistors.
• Provided a framework for understanding and optimizing performance limitations in scaled transistors.
• Highlighted the critical role of electron localization in low-dimensional electronic systems.