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Related Concept Videos

P-N junction01:11

P-N junction

1.7K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of P-N Junction01:16

Biasing of P-N Junction

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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.6K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

835
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
835
Electric Field of Parallel Conducting Plates01:16

Electric Field of Parallel Conducting Plates

2.1K
Gauss' law relates the electric flux through a closed surface to the net charge enclosed by that surface. Gauss's law can be applied to find the electric field and the charge enclosed in a region depending on its charge distribution.
Consider a cross-section of a thin, infinite conducting plate having a positive charge. For such a large thin plate, as the thickness of the plate tends to zero, the positive charges lie on the plate's two large faces. Without an external electric field, the...
2.1K
Magnetic Field Due To A Thin Straight Wire01:28

Magnetic Field Due To A Thin Straight Wire

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Consider an infinitely long straight wire carrying a current I. The magnetic field at point P at a distance a from the origin can be calculated using the Biot-Savart law.
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Related Experiment Video

Updated: Apr 4, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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Planar Josephson junctions templated by nanowire shadowing.

P Zhang1, Azarin Zarassi1, Mihir Pendharkar2

  • 1Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States of America.

Nanotechnology
|April 2, 2026
PubMed
Summary

This study introduces a novel nanowire shadow mask technique for fabricating Josephson junctions. This method simplifies the creation of proximity effect devices with quantum materials, improving device quality and enabling electrostatic gating.

Keywords:
InAs quantum wellSQUIDjosephson junctionnanowire shadow maskproximity effect

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Josephson junctions are crucial for quantum technologies and fundamental research.
  • Fabricating planar Josephson junctions with diverse quantum materials presents significant challenges.
  • Current fabrication methods can limit device quality and material compatibility.

Purpose of the Study:

  • To develop an alternative fabrication technique for proximity effect Josephson junctions.
  • To overcome limitations of standard lithographic methods for junction fabrication.
  • To enable the use of a wider range of quantum materials in electronic devices.

Main Methods:

  • Utilizing semiconductor nanowires as shadow masks for superconductor deposition.
  • Demonstrating the technique with InAs quantum wells, Al and Sn superconductors, and InAs/InSb nanowires.
  • Integrating self-aligned electrostatic gating using the template nanowire.

Main Results:

  • Fabricated Josephson junctions with critical current levels indicating transparent interfaces and uniform width.
  • Successfully created superconducting quantum interference devices (SQUIDs) with gate-tunable junctions.
  • Showcased the versatility of the nanowire shadow mask method for various quantum materials.

Conclusions:

  • The nanowire shadow mask technique offers a lithography-free approach to fabricating high-quality Josephson junctions.
  • This method enhances compatibility with diverse quantum materials, including 2D materials and topological insulators.
  • The technique facilitates the development of advanced quantum devices and novel electronic applications.