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Updated: Apr 13, 2026

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Thickness-dependent spin Hall magnetoresistance in few-layer CrPS4/Pt heterostructures
Caiqiong Xu1, Xue He1, Jicheng Wang1
1Spin-X Institute, School of Physics and Optoelectronics, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou 511442, China. ruiwu001@scut.edu.cn.
None:
van der Waals antiferromagnets hold great promise for next-generation high-density and high-speed spintronic devices due to their unique magnetic and electronic properties. In this work, we systematically investigated the thickness-dependent spin Hall magnetoresistance in ultrathin CrPS4/Pt heterostructures. The transverse resistance exhibits a distinct spin-flop signature below the Néel temperature (TN) when the CrPS4 thickness exceeds eight layers, whereas this feature gradually vanishes in thinner samples. Remarkably, an anomalous Hall signal emerges above the Néel temperature and persists even in devices with CrPS4 as thin as three monolayers, remaining robust up to room temperature. Furthermore, angle-dependent longitudinal resistance measurements reveal that the magnitudes of both spin Hall magnetoresistance and anisotropic magnetoresistance are independent of the odd/even parity of the CrPS4 layer number. Such behavior suggests that the interfacial spin-orbital coupled scattering from the orbital hybridization between CrPS4 and Pt plays a critical role in magnetotransport phenomena. These findings provide important insights into the design and understanding of ultrathin van der Waals antiferromagnetic spintronic devices.
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