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Ziegler–Natta Chain-Growth Polymerization: Overview

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Ziegler–Natta polymerization is another form of addition or chain‐growth polymerization used for synthesizing linear polymers over branched polymers. The catalyst used for polymerization is the Ziegler–Natta catalyst, named after Karl Ziegler and Giulio Natta, who developed it in 1953. This catalyst is an organometallic complex of titanium tetrachloride and triethyl aluminum, with the active form of the catalyst being an alkyl titanium compound. Using the Ziegler–Natta catalyst, high molecular...

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Related Experiment Video

Updated: Jul 2, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Controllable Growth of Ordered In-Plane Ge Hut Wires on Trench-Patterned Si Substrate.

Fei Gao^1,2, Ming Ming², Jie-Yin Zhang^2,3

¹Department of Physics, Qilu Institute of Technology, Jinan 250200, China.

Nanomaterials (Basel, Switzerland)

|April 13, 2026

Summary

Controllable growth of germanium (Ge) nanowires on silicon substrates is achieved using molecular beam epitaxy. This method enables size-tunable, catalyst-free Ge hut wires for scalable semiconductor quantum devices.

Keywords:

epitaxial growth germanium hut wires size-controllable

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Last Updated: Jul 2, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Published on: July 24, 2015

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Area of Science:

Materials Science
Nanotechnology
Quantum Computing

Background:

Scalable semiconductor qubit devices require advanced material foundations.
Germanium (Ge) nanowires offer potential for next-generation quantum technologies.

Purpose of the Study:

To develop a method for controllable growth of in-plane Ge nanowires.
To enable size-tunable Ge hut wires for integrated quantum devices.

Main Methods:

Utilized molecular beam epitaxy (MBE) on trench-patterned silicon substrates.
Employed a SiGe alloy layer as a strain buffer to control mound size.
Applied Ge deposition followed by in situ annealing for nanowire growth.

Main Results:

Achieved ordered, in-plane Ge hut wires with controllable dimensions.
Demonstrated size-tunable Ge nanowire growth with heights ranging from 1.8 nm to 4.0 nm.
Verified results using Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM).

Conclusions:

Developed a catalyst-free method for size-controllable Ge nanowire fabrication.
These tunable Ge hut wires are promising for integrated nanowire-based quantum devices.
This approach advances the scalability of Ge-based semiconductor qubit technology.