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An optoelectronic synapse based on electrochemically deposited CuI thin film for neuromorphic visual processing
Qiufei Yu1, Zhongao Yang1, Xiaojian Chen1
1Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai 200241, People's Republic of China.
Abstract:
This work reports a low-cost optoelectronic synaptic device based on an electrochemically deposited CuI thin film. The electrochemical deposition technique enables large-area and uniform thin-film fabrication under low-temperature and ambient-pressure conditions, offering significant advantages of simple processing, cost-effectiveness, and compatibility with flexible substrates. Under 445 nm light stimulation, the device successfully emulates the biological synaptic functions, including paired-pulse facilitation, spike-width-dependent plasticity, spike-frequency-dependent plasticity, and spike-number-dependent plasticity. Furthermore, by implementing a convolutional neural network for backend processing of the device-generated optoelectronic pulse signals, a high training set recognition accuracy of 95.2% is achieved under 50% noise perturbation in clothing image classification tasks, validating its potential for low-power, highly parallel neuromorphic computing applications.
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